d a t a sh eet BSN20 n-channel enhancement mode vertical d-mos transistor product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
BSN20 features direct interface to c-mos, ttl, etc. high-speed switching no secondary breakdown. applications thin and thick film circuits general purpose fast switching applications. description n-channel enhancement mode vertical d-mos transistor in a sot23 smd package. caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. pinning - sot23 pin symbol description 1 g gate 2 s source 3 d drain fig.1 simplified outline and symbol. handbook, halfpage s d g mam273 2 1 3 top view marking code : m8p. quick reference data symbol parameter conditions max. unit v ds drain-source voltage (dc) 50 v i d drain current (dc) 100 ma r dson drain-source on-state resistance i d = 100 ma; v gs =10v 15 w v gsth gate-source threshold voltage i d = 1 ma; v gs =v ds 1.8 v product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics notes to the limiting values and thermal characteristics 1. device mounted on a ceramic substrate, 10 8 0.7 mm. 2. device mounted on a printed-circuit board. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. max. unit v ds drain-source voltage (dc) - 50 v v gso gate-source voltage (dc) open drain - 20 v i d drain current (dc) - 100 ma i dm peak drain current - 300 ma p tot total power dissipation up to t amb =25 c; note 1 - 300 mw up to t amb =25 c; note 2 - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 430 k/w note 2 500 k/w symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0; i d =10 m a50 -- v v gsth gate-source threshold voltage v ds =v gs ; i d = 1 ma 0.4 - 1.8 v i dss drain-source leakage current v gs = 0; v ds =40v -- 1 m a i gss gate-source leakage current v ds = 0; v gs = 20 v -- 100 na r dson drain-source on-state resistance v gs = 10 v; i d = 100 ma - 815 w v gs =5v; i d = 100 ma - 14 20 w v gs = 2.5 v; i d =10ma - 18 30 w ? y fs ? forward transfer admittance v ds = 10 v; i d = 100 ma 40 80 - ms c iss input capacitance v gs = 0; v ds =10v; f=1mhz - 815pf c oss output capacitance v gs = 0; v ds =10v; f=1mhz - 715pf c rss reverse transfer capacitance v gs = 0; v ds =10v; f=1mhz - 25pf switching times t on turn-on time v gs = 0 to 10 v; v dd =20v; i d = 100 ma - 25ns t off turn-off time v gs =10to0v; v dd =20v; i d = 100 ma - 510ns product specification BSN20 sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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